| PART |
Description |
Maker |
| SEMIX703GB126HD SEMIX703GB126HD07 |
Trench IGBT Modules 700 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| MA4EX950M-1225T |
HMICTM硅双平衡混频器，700 - 1200兆赫
Silicon Double Balanced HMICTM Mixer, 700 - 1200 MHz
|
MACOM[Tyco Electronics]
|
| MA4EX900L-1226 |
Silicon Double Balanced HMIC Mixer, 700 - 1000 MHz HMIC硅双平衡混频器，700 - 1000兆赫
|
Daesan Electronics, Corp.
|
| FDPF12N50FT |
N-Channel UniFETTM FRFETMOSFET 500V, 11.5A, 700 m
|
Fairchild Semiconductor
|
| 12N70L-TF1-T 12N70G-TF1-T 12N70G-TA3-T 12N70G-TF3- |
12 Amps, 700 Volts N-CHANNEL MOSFET
|
Unisonic Technologies
|
| FDD6632_04 FDD6632 FDD663204 FDD6632NL |
30V N-Channel Logic Level UltraFET Trench Power MOSFET 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Logic Level UltraFET? Trench Power MOSFET 30V, 9A, 70m?/a>
N-Channel Logic Level UltraFET㈢ Trench Power MOSFET 30V, 9A, 70mз
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., Ltd
|
| 2N70L-TN3-R 2N70G-TN3-R 2N70L-TA3-T 2N70L-TF1-T 2N |
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| FDB3682_FDP3682 FDB3682 FDP3682 |
N-Channel UltraFET Trench MOSFET 100V, 32A, 36mOhm
N-Channel UltraFET Trench MOSFET 100V, 32A, 36m Ohm
From old datasheet system
|
Fairchild Semiconductor
|
| MMFT2406T1-D |
Power MOSFET 700 mA, 240 Volts N-Channel SOT-223
|
ON Semiconductor
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| FDD5810 FDD581007 FDD5810-F085 |
N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm
N-Channel Logic Level Trench㈢ MOSFET
N-Channel Logic Level Trench? MOSFET
|
Fairchild Semiconductor
|
