| PART |
Description |
Maker |
| BUL62A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BFN26 Q62702-F1065 BFN24 Q62702-F976 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IDT6168LAE IDT6168SAE IDT6168SART |
x4 SRAM
x4SRAM
High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down, High Creepage Package x4的SRAM
|
TE Connectivity, Ltd.
|
| FS10SM-16 FS10SM-16A |
Power MOSFETs: FS Series, High Voltage, 800V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| 2N6031 2N5631 2N5631-D |
POWER TRANSISTORS COMPLEMENTARY SILICON
High-Voltage - High Power Transistors
High-Voltage High-Power Transistors
|
ONSEMI[ON Semiconductor]
|
| APT30GT60BRD |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
Thunderbolt IGBT & FRED 600V 55A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| 2SC3030 |
TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING
|
FUJI[Fuji Electric]
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
| 2SC5027-X-TF3-T 2SC5027-R-TA3-T 2SC5027-X-TA3-T 2S |
HIGH VOLTAGE AND HIGH RELIABILITY 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
http://
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
