| PART |
Description |
Maker |
| NAND02G-B2C NAND02GR3B2BZA1E NAND02GR4B2BZA1F NAND |
1千兆2千兆位，2112 Byte/1056字的页面.8V/3VNAND闪存
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面.8V/3V，NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND08GW4B2CN6E NAND08G-BXC NAND08GR3B2C NAND08GR3 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
http://
|
| NAND02GW3B2D |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
|
Numonyx B.V
|
| NAND16GW3C4A NAND08GW3C4AN1E NAND16GW3C4AN1E NAND0 |
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| RX1.25GBIT/S V23832-T2431-M101 |
PAROLI 2 Tx AC, 1.25 Gbit/s 帕罗2个发送，1.25千兆交流/
Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 1.25 Gbit/s,
|
Infineon Technologies AG
|
| V23848-M15-C56 |
iSFP-Intelligent Small Form-factor Pluggable 1.25 Gigabit Ethernet 2.125/1.0625 Gbit/s Fibre Channel Single Mode 1310 nm Transceiver with LC Connector iSFP -智能小型可插1.25千兆以太.125/1.0625 Gbit / s的与LC连接器单模光纤通道收发1310纳米
|
Infineon Technologies AG
|
| V23815-K1306-M136 V23814-K1306-M136 RXAC125GBIT/S |
Parallel Optical Links (PAROLI) - PAROLI?Tx, AC, 1,25 Gbit/s, Increased power budget
Parallel Optical Links (PAROLI) - PAROLI?Rx, AC, 1,25 Gbit/s, Increased power budget
PAROLI Tx AC/ 1.25 Gbit/s
PAROLI Tx AC, 1.25 Gbit/s
|
INFINEON[Infineon Technologies AG]
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| HYI18T1G400BF-2.5 HYI18T1G400BF-2.5F HYI18T1G800BC |
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.6 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
http://
|
|
