| PART |
Description |
Maker |
| M5M51016BRT-10VLL M5M51016BRT-10VL M5M51016BTP-10V |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-1048576-BIT CMOS STATICRAM
|
Mitsubishi Electric Corporation
|
| LH64258Z-10 |
x4 Static Column Mode DRAM
|
|
| V53C102AK70 V53C102AK70L V53C102AK10 V53C102AK10L |
x1 Static Column Mode DRAM x1静态列模式DRAM
|
ON Semiconductor
|
| HM514258JP-8S HM514258ZP-8S HM514258P-8S HM514258Z |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
DB Lectro, Inc.
Glenair, Inc.
Accutek Microcircuit, Corp.
|
| HM514102BLS-7 HM514102BLZ-7 |
x1 Static Column Mode DRAM x1静态列模式DRAM
|
EPCOS AG
|
| HM514402BZ-7 HM514402BS-7 HM514402BLS-7 |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
EPCOS AG
|
| HM621100A |
1048576 word / 1 Bit High Speed CMOS Static RAM
|
Hitachi Semiconductor
|
| M5M512R M5M512R88DJ-10 M5M512R88DJ-12 M5M512R88DJ- |
1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
|
| MH1M144CXTJ-6 MH1M144CXTJ |
FAST PAGE MODE 150994944-BIT (1048576-WORD BY 144-BIT)DYNAMIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| KM44C258CP-6 KM44C258CJ-6 KM44C258CJ-8 KM44C258CP- |
256K X 4 STATIC COLUMN DRAM, 60 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 60 ns, PDSO20
256K X 4 STATIC COLUMN DRAM, 80 ns, PDSO20
256K X 4 STATIC COLUMN DRAM, 80 ns, PDIP20
|
|
