PART |
Description |
Maker |
IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
|
Integrated Device Technology, Inc. IDT
|
CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1355A-117BGC CY7C1355A-117BGI CY7C1357A-100AC |
256K x 36/512K x 18 Synchronous Flow-Thru SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
IS61NP25618-133B2 IS61NP25618-133B2I IS61NP25618-1 |
256K X 18 ZBT SRAM, 4.2 ns, PBGA119 PLASTIC, BGA-119 256K X 18 ZBT SRAM, 3.8 ns, PBGA119 PLASTIC, BGA-119 256K X 18 ZBT SRAM, 5 ns, PQFP100
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
|
GVT71512ZC18-5I GVT71512ZC18-6I CY7C1356A-133ACI C |
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.6 ns, PQFP100 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.6 ns, PBGA119 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 5 ns, PQFP100 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 5 ns, PBGA119 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 5 ns, PQFP100 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.2 ns, PQFP100 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 5 ns, PBGA119 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256 × 36/512K × 18流水线的SRAM架构的总线延迟
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
IDT71V3559S85BG IDT71V3559S75BG IDT71V3559S75BG8 I |
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs
|
IDT Integrated Device Technology
|
CY7C1356CV25-166BZXC CY7C1356CV25-166BZC CY7C1356C |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 3.2 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 256K X 36 ZBT SRAM, 3.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GS882Z36BB-150V GS882Z36BB-150IV |
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 36 ZBT SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
|
CY7C1356C-166BZI CY7C1356C-166BZXI CY7C1356C-166BZ |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 3.2 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 256K X 36 ZBT SRAM, 2.8 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GS8162Z72CC-150V GS8162Z72CC-150IV GS8162Z72CGC-20 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 7.5 ns, PBGA209 18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 6.5 ns, PBGA209
|
GSI Technology, Inc.
|
IS61NVF51236-6.5TQL IS61NVF51236-6.5TQL-TR IS61NVF |
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 7.5 ns, PQFP100 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 7.5 ns, PBGA165 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 7.5 ns, PQFP100 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc.
|
|