| PART |
Description |
Maker |
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| FM2G75US60 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 75A条一（c
Molding Type Module
|
Sharp, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| VDI150-12S4 VID150-12S4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展| 150A一c
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展| 150A一（c
|
Samtec, Inc.
|
| F6-8R10KF |
TRANSISTOR | IGBT POWER MODULE | FULL BRIDGE | 1KV V(BR)CES | 8A I(C) 晶体管| IGBT功率模块|全桥| 1KV交五（巴西）国际消费电子展| 8A条一（c
|
ECM Electronics, Ltd.
|
| IDT5993A-5QI IDT5993A-5Q 5993A_DATASHEET IDT5993A- |
From old datasheet system
IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:890W; Collector Emitter Voltage, Vceo:250V; Package/Case:Module; Transistor Polarity:N Channel RoHS Compliant: Yes
IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:1500W; Collector Current:400A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No
IGBT Module; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:150W; Collector Current:30A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No
IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:960W; Collector Emitter Voltage, Vceo:600V; Package/Case:Module; Transistor Polarity:N Channel RoHS Compliant: Yes
PROGRAMMABLE SKEW PLL CLOCK DRIVER TURBOCLOCK PLL BASED CLOCK DRIVER, 8 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO28
Scan Test Devices With 18-Bit Universal Bus Transceiver 64-LQFP -40 to 85 可编程相偏PLL时钟驱动器TURBOCLOCK
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| CM200DY24E |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 200安培我（丙）
|
Vishay Intertechnology, Inc.
|
| CM100TF12E |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 100号A一（c
|
KOA Speer Electronics,Inc.
|
| CM100DY12H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 100号A一（c
|
Mitsubishi Electric, Corp.
|
| 2MBI100J120 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一c
|
Samsung Semiconductor Co., Ltd.
|
| IEF21KA1 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 15A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1KV交五（巴西）国际消费电子展|5A一（c
|
TE Connectivity, Ltd.
|
