| PART |
Description |
Maker |
| HY57V561620HLT HY57V561620HT-H |
x16 SDRAM
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix
|
| K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYB39S256160CT-8A HYB39S256160CTL-8A HYB39S256800C |
x16 SDRAM
179 POS FR-4 PGA SOCKET
x8 SDRAM x8 SDRAM内存
|
Infineon Technologies AG
|
| MT46V16M16CV-6ITK MT46V64M4 MT46V32M8 MT46V32M8P-5 |
256Mb: x4, x8, x16 DDR SDRAM Features
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| HY5V26CLF-8 HY5V26CLF-H HY5V26CLF-P HY5V26CLF-S HY |
x16 SDRAM x16内存
|
Hitachi,Ltd.
Hynix Semiconductor, Inc.
|
| 64M16 256M4 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
| IS43DR81280B |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| MT47H16M16BG-3ITB |
256Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| MT41J128M8 128M8 MT41J256M4 MT41J64M16 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
| VG3617161BT |
x16 CMOS SDRAM
From old datasheet system
|
VSI
|
| HYB18T512161B2F-20/25 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
| HYB18T512161B2F-20 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
