PART |
Description |
Maker |
2SC2411 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
BFR93 |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体 NPN 5 GHz wideband transistor
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
BFU550XR |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
BFU520 BFU520-15 |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
BFU730LX-15 BFU730LX |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
BFU725F-N1 BFU725F11 BFU725F-N1-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
BFU730F BFU730F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
BFU610F |
NPN Wideband Silicon Germanium RF Transistor
|
Philips Semiconductors NXP
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz)
|
TOSHIBA
|
UPC2726T00 UPC2726T-E3 UPC2726T |
1.6 GHz DIFFERENTIAL WIDEBAND SILICON WIDEBAND SILICON
|
NEC[NEC]
|