PART |
Description |
Maker |
CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165 2M X 8 DDR SRAM, 0.45 ns, PBGA165
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
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HYNIX[Hynix Semiconductor]
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MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 16M X 16 DDR DRAM, 0.7 ns, PBGA60 Double Data Rate (DDR) SDRAM
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Micron Technology
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IDT71P74104S167BQ IDT71P74104S200BQ IDT71P74104S25 |
1.8V 512K x 36 QDR II PipeLined SRAM 1.8V 2M x 9 QDR II PipeLined SRAM 1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 2M x 8 QDR II Pipelined SRAM 18Mb Pipelined QDR II SRAM Burst of 4
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IDT http://
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HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb 256M-P DDR SDRAM IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor http://
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IC61S6432-8TQI IC61S6432 IC61S6432-117PQ IC61S6432 |
100MHz; 3.3V; 64K x 32 synchronous pipelined static RAM SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM From old datasheet system 200MHz; 3.3V; 64K x 32 synchronous pipelined static RAM 75MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
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ICSI[Integrated Circuit Solution Inc]
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GS8182S18GD-267 GS8182S18GD-267T GS8182S18GD-267I |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, LEAD FREE, FBGA-165 18Mb Burst of 2 DDR SigmaSIO-II SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165
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GSI Technology, Inc.
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IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
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Integrated Device Technology, Inc. IDT
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K7N403601A K7N401801A |
256Kx18-Bit Pipelined NtRAMData Sheet 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM 128K × 36
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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EBD52UC8AARA-7A EBD52UC8AARA-7B EBD25EC8AJFA EBD25 |
512MB DDR SDRAM SO DIMM 256MB Unbuffered DDR SDRAM DIMM 1GB Unbuffered DDR SDRAM DIMM 512MB Registered DDR SDRAM DIMM 256MB DDR SDRAM SO DIMM 512MB Unbuffered DDR SDRAM DIMM 1GB DDR SDRAM SO DIMM 1GB Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
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http:// ELPIDA MEMORY INC
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HYS72D64020GR HYS72D128020GR HYS72D64000GR |
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚G位寄存型 DDR-I SDRAM 模块) 2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚12M位寄存型 DDR-I SDRAM 模块) 2.584针注册的DDR - 1 SDRAM的模块(2.584脚,512M的位寄存型的DDR - SDRAM内存模块余)
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SIEMENS AG
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HY5DU121622ALT-D4 HY5DU121622ALT-M HY5DU12422AT HY |
DDR SDRAM - 512Mb 64M X 8 DDR DRAM, 0.7 ns, PDSO66 32M X 16 DDR DRAM, 0.7 ns, PDSO66
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HYNIX SEMICONDUCTOR INC
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