PART |
Description |
Maker |
IRG4PH50KD IRG4PH50KD-E |
45 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A) 1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
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IRF[International Rectifier]
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SGU20N40L |
Wide Noise Immunity IGBT Suitable for Strobe Flash applications(应用于闸门闪光的抗噪声绝缘栅双极晶体IGBT)) 400 V, N-CHANNEL IGBT, TO-251
|
Fairchild Semiconductor, Corp.
|
1MBI400NB-120 |
IGBT module 400 A, 1200 V, N-CHANNEL IGBT
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Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric] http://
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SPMQ613-02TXV |
400 A, 600 V, N-CHANNEL IGBT HERMETIC SEALED PACKAGE-8 600V, 400A FAST SWITCHING IGBT HALF BRIDGE
|
Solid State Devices, Inc. Solid States Devices, Inc
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IRG4PH40UD IRG4PH40UD-E |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
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International Rectifier, Corp. IRF[International Rectifier]
|
GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS 5 A, 400 V, N-CHANNEL IGBT
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Toshiba Semiconductor
|
IRG4PC40K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
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IRF[International Rectifier]
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IRG4PC30K IRG4PC30KPBF |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
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IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
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IRF[International Rectifier]
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GP400LSS12 |
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 10uF; Voltage: 160V; Case Size: 18x20 mm; Packaging: Bulk 400 A, 1200 V, N-CHANNEL IGBT Single Switch IGBT Module
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Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
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IRG4RC10U IRG4RC10UTR IRG4RC10UTRL IRG4RC10UTRR |
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
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