| PART |
Description |
Maker |
| IRF450 IRF451 IRF452 IRF252 IRF250 IRF251 |
N-CHANNE POWER MOSFETS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| CE2766 |
6-Channe Audio DAC
|
CEI
|
| IRFIZ34N-004 IRFIZ46N-002 IRFIZ46N-029 IRFIZ46N-02 |
19 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
31 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
13 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
28 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
2.1 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
21 A, 60 V, 0.042 ohm, N-CHANNE
28 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
4.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
JST Mfg. Co., Ltd.
Vishay Intertechnology, Inc.
Austin Semiconductor, Inc
|
| IRF637 IRFP256 IRFP257 IRFP242R IRF230R IRFP240R I |
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 6.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 23A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 21A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 500MA I(D) | TO-250VAR
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 400MA I(D) | TO-250VAR
晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 18A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 8A条（丁）|04AA
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 8A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 5A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 33A I(D) | TO-247 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|3A条（丁）|47
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 22A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 275V五（巴西）直| 22A条（丁）|04AA
|
ECM Electronics, Ltd.
Fairchild Semiconductor, Corp.
|
| STD2N50 STD2N50-1 STD2N50T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-252 晶体管| MOSFET的| N沟道| 500V五（巴西）直|甲（丁）|52
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR -通道增强型功率MOS器件
STD2N50-1 I-PAK MOSFET-TRANSIT
N-CHANNEL MOSFET
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| 2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 4A条（丁）|47
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 6A条（丁）|20
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247
MOSFET transistors
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
From old datasheet system
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220
TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
|
Toshiba, Corp.
Mallory Sonalert Products, Inc.
Fuji Semiconductors, Inc.
|
| STB7NA40 4234 STB7NA40-1 STB7NA40T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-262VAR
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
STMicroelectronics
|
| DUI230S DU1230S |
RF MOSFET Power Transistor, 30W, 12V, 2 - 175 MHz
RF MOSFET Power Transistor锛?30 W锛?12V锛?2 -175 MHz
RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz 射频MOSFET功率晶体管，3OW2V - 175兆赫
RF MOSFET Power Transistor30 W12V2 -175 MHz 射频MOSFET功率晶体管，30瓦，12V的，2 -175兆赫
RF MOSFET Power Transistor/ 3OW/ 12V 2 - 175 MHz
|
Hubbell Wiring Device-Kellems
TE Connectivity, Ltd.
Tyco Electronics
|
| IRLC130 IRFC214R IRFC9014R IRFC254R IRFC054R IRFC2 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | CHIP
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | CHIP
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 100V的五（巴西）决策支持系统|芯片
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 200伏五（巴西）决策支持系统|芯片
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 400V五（巴西）决策支持系统|芯片
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | CHIP 晶体管| MOSFET的| P通道| 100V的五（巴西）决策支持系统|芯片
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | CHIP 晶体管| MOSFET的| P通道| 200伏五（巴西）决策支持系统|芯片
|
ITT, Corp.
Amphenol, Corp.
ZETTLER electronics GmbH
Electronic Theatre Controls, Inc.
|
| HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GATE 或非
MOSFET-PWR 500V 8A
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
|
Vishay Siliconix
Vishay Intertechnology,Inc.
|
|
