| PART |
Description |
Maker |
| IXZ316N60 |
600V (max) Switch Mode MOSFETS
|
IXYS Corporation
|
| KA5M02659RN KA5M0265 KA5H02659 KA5M02659R KA5L0265 |
IC,SMPS CONTROLLER,CURRENT-MODE,BIPOLAR/MOS,DIP,8PIN,PLASTIC
IC,SMPS CONTROLLER,CURRENT-MODE,BIPOLAR/MOS,SIP,4PIN,PLASTIC
(KA5x02xx Series) Fairchild Power Switch(FPS)
Microprocessor Development Tool; Interface Type:Serial; Kit Contents:Development Board with on Board EEPROM, Optional DB9 Cable, and DOS Based Bootloader; For Use With:MC68HC11E1; Memory Organization - EEPROM:32k; Clock Speed:8MHz
Fairchild Power Switch(FPS) 8 A SWITCHING REGULATOR, 110 kHz SWITCHING FREQ-MAX, PZFM5
Fairchild Power Switch(FPS) 8 A SWITCHING REGULATOR, 110 kHz SWITCHING FREQ-MAX, PSFM5
Fairchild Power Switch(FPS) 飞兆半导体功率开关（FPS
Fairchild Power Switch(FPS) 8 A SWITCHING REGULATOR, PZFM4
2A/800V 70KHz Power Switch
2A/800V 100KHz Power Switch
2A/650V 50KHz Power Switch
2A/650V 100KHz Power Switch
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| NTE2381 NTE2380 |
Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|
| APT6017B2FLL APT6017LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 35A 0.017 Ohm
|
Advanced Power Technology, Ltd.
|
| GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS
EMI/RFI FILTER
IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes
IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns;
EPROM CMOS Programmable Logic Device
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MAX830 MAX830CWE MAX830-MAX833 MAX831CWE MAX832CWE |
5V/3.3V/3V/Adjustable-Output, 1A, Step-Down, PWM, Switch-Mode DC-DC Regulators 1.2 A SWITCHING REGULATOR, 100 kHz SWITCHING FREQ-MAX, PDSO16
5V/3.3V/3V/Adjustable-Output 1A Step-Down PWM Switch-Mode DC-DC Regulators
5V/3.3V/3V/Adjustable-Output / 1A / Step-Down / PWM / Switch-Mode DC-DC Regulators
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| APT6032AVR |
POWER MOS V 600V 17.5A 0.320 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6035SVR APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 18A 0.350 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT6025BVR |
POWER MOS V 600V 25A 0.250 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6027HVR |
POWER MOS V 600V 20A 0.270 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| IRFIB6N60A IRFIB6N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)
|
IRF[International Rectifier]
|
| APT6025BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 600V 25A 0.250 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
