| PART |
Description |
Maker |
| W971GG8KB-25-TR |
16M 8 BANKS 8 BIT DDR2 SDRAM
|
Winbond
|
| W9751G6JB W9751G6JB-25 |
8M ?4 BANKS ?16 BIT DDR2 SDRAM
8M x 4 BANKS x 16 BIT DDR2 SDRAM
|
http://
Winbond
|
| W9751G6KB |
8M ?4 BANKS ?16 BIT DDR2 SDRAM
|
Winbond
|
| W9725G6JB |
4M ?4 BANKS ?16 BIT DDR2 SDRAM
|
Winbond
|
| W9712G6JB |
2M × 4 BANKS × 16 BIT DDR2 SDRAM
|
Winbond
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM
16M x 4 Bit 8k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| W981208BH-8H W981208BH-7 |
4M x 4 BANKS x 8 BIT SDRAM
x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| EDE2508ABSE-5C-E EDE2516ABSE-5C-E EDE2516ABSE-6E-E |
256M bits DDR2 SDRAM 16M X 16 DDR DRAM, 0.45 ns, PBGA84
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
