| PART |
Description |
Maker |
| M65KG512AB6W9 M65KG512AB M65KG512AB6W8 M65KG512AB8 |
512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM
|
STMicroelectronics
|
| K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27 |
(HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| K4N51163QC-ZC36 K4N51163QC-ZC K4N51163QC-ZC25 K4N5 |
512Mbit gDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| MD4331-DXX |
Mobile DiskOnChip G3 512Mbit/1Gbit Flash Disk
|
M-Systems
|
| H55S5162DFR-60M H55S5162DFR-75M H55S5162DFR-A3M |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
| H55S5122DFR-60M H55S5122DFR-75M H55S5122DFR-A3M H5 |
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
|
Hynix Semiconductor
|
| W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I |
1M × 4 BANKS × 16 BITS SDRAM
1M 4 BANKS 16 BITS SDRAM 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54
|
Winbond Electronics Corp
http://
Winbond Electronics, Corp.
|
| HYB18T512160AF-5 HYB18T512800AF-3.7 HYB18T512400AF |
512-Mbit DDR2 SDRAM
512Mbit Double Data Rate (DDR2) Component
|
Infineon Technologies A...
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| HY57V281620HCT-6 HY57V281620HCT-7 HY57V281620HCT-K |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
4 Banks x 2M x 16bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
