| PART |
Description |
Maker |
| IDT7202 IDT7200L12J IDT7200L12J8 IDT7200L12SO IDT7 |
1K x 9 AsyncFIFO, 5.0V
512 x 9 AsyncFIFO, 5.0V
256 x 9 AsyncFIFO, 5.0V
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9 and 1,024 x 9
|
IDT
|
| LH28F800BGH-L LH28F800BGR-TL85 LH28F800BGR-TL12 LH |
Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk 8 M位（512 KB的16）SmartVoltage闪存
RES CURRENT SENSE .025 OHM 1W 1% 8 M位（512 KB的16）SmartVoltage闪存
8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位（512 KB的16）SmartVoltage闪存
|
http://
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Compo...
|
| M24512-WBN6 M24512-WBN6T M24512-WMW6T MM24512-WBN6 |
512 Kbit Serial I??Bus EEPROM
512 Kbit Serial IBus EEPROM 512千位串行I眷总线的EEPROM
CAP 3300UF 50V ELECT SMG RAD
512 Kbit Serial I? Bus EEPROM
512 Kbit Serial IC Bus EEPROM
512 Kbit Serial I裁 Bus EEPROM
512 KBIT SERIAL I²C BUS EEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| CD97-00-1-444 |
IMAGE SENSOR-CCD, 512(H) X 512(V) PIXEL, RECTANGULAR, THROUGH HOLE MOUNT
|
E2V TECHNOLOGIES PLC
|
| LH540225 |
512 x 18 / 1024 x 18 Synchronous FIFO 512 ×一千?二十四分之一十八× 18同步FIFO
|
Sharp, Corp.
|
| IDT72V3643L10PF IDT72V3633 IDT72V363310PF IDT72V36 |
From old datasheet system
3.3 VOLT CMOS SyncFIFO WITH BUS-MATCHING 256 x 36, 512 x 36, 1,024 x 36
512 x 36 SyncFIFO, 3.3V
|
IDT[Integrated Device Technology]
|
| 28C04AFTI/L 28C04AFI/P 28C04AI/P 28C04AI/L 28C04AF |
4K (512 x 8) CMOS EEPROM 4K的（512 × 8）的CMOS EEPROM
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| AM4701-45JC AM4701-45PC AM4701-35 AM4701-35JC AM47 |
Dual 512 x 8 Bidirectional Parity Generator/Checker, Bypass Mode, Programmable AE/AF Flags 512 X 8 BI-DIRECTIONAL FIFO, 45 ns, PDIP28
Dual 512 x 8 Bidirectional Parity Generator/Checker, Bypass Mode, Programmable AE/AF Flags 512 X 8 BI-DIRECTIONAL FIFO, 45 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| R1LP0408CSP-7LC R1LP0408C-C R1LP0408CSB-5SC R1LP04 |
4M SRAM (512-kword ??8-bit)
4M SRAM (512-kword 8-bit)
4M SRAM (512-kword × 8-bit)
4M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| CYD02S36V CYD04S36V CYD09S36V CYD18S36V |
FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步双端口RAM) FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双口RAM（FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双端口RAM）的
|
Cypress Semiconductor Corp.
|
