| PART |
Description |
Maker |
| K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYMD132645BL8-H HYMD132645BL8-M HYMD132645BL8-L HY |
SDRAM|DDR|32MX64|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 32MX64 |的CMOS |内存| 184PIN |塑料
32Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x16 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
SUSUMU Co., Ltd.
|
| W981216AH-8H W981216AH-75 W981216AH |
2M x 16 bit x 4 Banks SDRAM
x16 SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| MT48LC32M16A2 MT48LC128M4A2 |
512Mb x4, x8, x16 SDRAM
|
Micron Technology
|
| IS43DR81280 |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| MT47H64M16HR-25ELH |
1Gb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| IS43DR16128 IS43DR16128-3DBI IS43DR16128-3DBL IS46 |
2Gb (x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| VG3617161BT |
x16 CMOS SDRAM
From old datasheet system
|
VSI
|
| HYB18T256161BF-20 HYB18T256161BF-25 HYB18T256161BF |
256-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
| HYB18T512161B2F HYB18T512161B2F-20_25 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
