| PART |
Description |
Maker |
| HMC232G806 |
GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| HMC347C8 |
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH DC - 8.0 GHz
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC347C8 HMC347C808 |
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz
|
Hittite Microwave Corporation
|
| HMC132 |
GaAs MMIC HIGH-ISOLATION
|
Hittite Microwave Corporation
|
| SSW-124 |
DC-6 GHz High Isolation SPDT GaAs MMIC Switch
|
Stanford Microdevices
|
| NJG1690MD7 |
HIGH ISOLATION X-SPDT (DP4T) SWITCH GaAs MMIC
|
New Japan Radio
|
| HMC132G701 HMC132G7 |
GaAs MMIC HIGH-ISOLATION SPDT SWITCH, DC - 6 GHz
|
Hittite Microwave Corporation
|
| M515 |
Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
|
M/A-COM Technology Solutions, Inc.
|
| HMC304MS806 HMC304MS8 |
GaAs MMIC HIGH IP3 SINGLEBALANCED SMT MIXER, 1.7 - 3 GHz
|
Hittite Microwave Corpo...
Hittite Microwave Corporation
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 207S8E |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 0.7 - 2.0 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC364S8G06 |
SMT GaAs HBT MMIC DIVIDE-BY-2, DC - 12.5 GHz
|
Hittite Microwave Corporation
|
