| PART |
Description |
Maker |
| IRG4CC81KB IRG4CC40RB |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|芯片
IRG4CC81KB IGBT Die in Wafer Form
|
International Rectifier
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| SGW15N120 |
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,32A I(C),TO-247AC
|
Infineon
|
| HGT1S3N60B3S HGT1S3N60B3S9A |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB
TRANS IGBT CHIP N-CH 600V 7A 3TO-263AB RAIL
|
Fairchild Semiconductor
|
| OMD38L60ML OMD75N06ML |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | M:ML111MW084
30V N-Channel PowerTrench MOSFET
|
|
| ITS08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| F25A12GF |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-247VAR 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展|5A一（c）|47VAR
|
MEAN WELL Enterprises Co., Ltd.
|
| IXGH20N60U1 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-247AD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 40A条一（c）|采用TO - 247AD
|
IXYS, Corp.
|
| IXSH35N100 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 35A I(C) | TO-247AD 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 35A条一（c）|采用TO - 247AD
|
PerkinElmer, Inc.
|
| HGTP1N120BN HGTD1N120BNS HGTD1N120BNS9A |
5.3A, 1200V, NPT Series N-Channel IGBT
5.3A, 1200V, NPT Series N-Channel IGBT 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
