| PART |
Description |
Maker |
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| E28F004BVT80 E28F004BVB80 E28F004BVT60 E28F004BVT1 |
4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Dual-Slot, PCMCIA Analog Power Controller
Evaluation Kit for the MAX5943A/B/C/D/E
4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO48
4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO56
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| IS61LPS51218A IS61LPS51218A12 IS64LPS25636A IS61LP |
256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc
|
| GS880F36BT-7.5IV GS880F36BT-6.5IV GS880F36BT-6.5V |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
http://
|
| GS880E18BGT-200I GS880E18BGT-333I GS880E18BT-333 G |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS880F18AT-7 GS880F18AT-5.5 GS880F18AT-5.5I GS880F |
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS880F18BGT-5.5I GS880F18BGT-6.5 GS880F18BT GS880F |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS880F18BT-5.5IV GS880F18BT-5.5V GS880F18BT-6.5IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS880E18AT-133 GS880E18AT-133I GS880E18AT-250 GS88 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs
|
GSI[GSI Technology]
|
| CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| SMJ44C251B SMJ44C251B-10HJM SMJ44C251B-10HMM SMJ44 |
256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
|
Austin Semiconductor
|
