| PART |
Description |
Maker |
| PZTA92T1G |
High Voltage Transistor; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA
|
Rectron Semiconductor
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| STN4NF06L |
N-channel 60 V, 0.07 Ohm, 4 A STripFET(TM) 2 Power MOSFET in SOT-223 package
|
ST Microelectronics
|
| BSP317Q67000-S94 |
TRANSISTOR MOSFET SMD SOT 223 晶体管MOSFET的贴片采用SOT 223
|
EM Microelectronic
|
| IRLL3303TR |
30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRFL024Z |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| BUK9880-55T/R |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 7.5A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 7.5AI（四）|的SOT - 223
|
Pulse Engineering, Inc.
|
| FQT26N03L |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 5.9AI（四）|的SOT - 223
|
Fairchild Semiconductor, Corp.
|
| BUK481-100AT/R |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|的SOT - 223
|
Cooper Bussmann, Inc.
|
| AUIRLL024N |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package
|
International Rectifier
|
