PART |
Description |
Maker |
HYM72V1620GS-50 HYM72V1620GS-50- HYM72V1620GS-60 H |
16M x 72-Bit Dynamic RAM Module 16M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168 From old datasheet system 16M x 72-Bit Dynamic RAM Module (ECC - Module )
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
UPD4218160LE-60 |
CMOS 16M-Bit DRAM
|
ETC
|
UPD4218160 |
(UPD42S16160 / UPD42S18160) 16M-Bit DRAM
|
NEC Electronics
|
HM5116100S HM5116100 HM5116100S-6 HM5116100S-7 |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh
|
Hitachi Semiconductor
|
TC59S1608FT-12 |
CMOS 16M-bit Synchronous DRAM
|
ETC
|
GM71V65403A GM71VS65403AL |
(GM71VS65403AL / GM71V65403A) 16M x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
HM5118165TT-5 HM5118165TT-6 HM5118165TT-7 HM511816 |
16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
|
Hitachi Semiconductor
|
GM71V64403A |
(GM71VS64403AL / GM71V64403A) 16M x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
AS4SD16M72PBG-10_ET AS4SD16M72PBG-10_IT AS4SD16M72 |
16M x 72, SDR SDRAM MCP 16M X 72 SYNCHRONOUS DRAM, PBGA219 PLASTIC, PBGA-219
|
http:// Austin Semiconductor, Inc Micross Components
|
M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位(16777216 - Word位)动态随机存储器 4M X 16 FAST PAGE DRAM, 50 ns, PDSO50 16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|