PART |
Description |
Maker |
M67776H |
RF POWER MODULE 896-941MHz, 7.2V, 5.0W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
M67760HC 67760HC |
RF POWER MODULE 896-941MHz, 12.5V, 20W, FM MOBILE RADIO From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
RA45H8994M1-101 RA45H8994M1 |
RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
RA45H8994M1-101 RA45H8994M1-11 |
RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Sem...
|
PE51008 |
Mobile Antenna, 806 - 896 MHz, 3 dB
|
Pasternack Enterprises, Inc.
|
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
|
IXYS, Corp.
|
WS128K32N-35H1M WS128K32N-35H1C WS128K32N-17H1C WS |
35ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 15ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 55ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 45ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????5ns锛? 128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????0ns锛? x32 SRAM Module X32号的SRAM模块 128Kx32 SRAM Module(128Kx32静态RAM模块(存取时7ns 128Kx32 SRAM Module(128Kx32静态RAM模块(存取时0ns 128Kx32 SRAM Module(128Kx32静态RAM模块(存取时5ns 17ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
|
NXP Semiconductors N.V. White Electronic Designs Corporation
|
PF0027 |
MOS FET Power Amplifier Module MOSFET Power Ampllfier Module for E-TACS Handy Phone
|
Renesas Technology Hitachi Semiconductor
|
BSM150GT12 BSM150GT120DN2 150T12N2 C67070-A2518-A6 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BSM111AR C67076-S1013-A2 BSM111 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 200 A, 100 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块(单开关电源模块N通道增强模式
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|