| PART |
Description |
Maker |
| P6MU-2415EH52 P6MU-0505EH52 P6MU-0512EH52 P6MU-120 |
Input voltage:5V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:12V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
Input voltage:5V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 15V (67mA), 5.2KV isolated 1W unregulated single output
Input voltage:12V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
5.2 KV ISOLATED 1W UNREGULATED SINGLE OUTPUT DIP14 5.2千伏隔震1W的未稳压单输出DIP14
|
http://
PEAK[PEAK electronics GmbH]
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| 1N4530 |
Diode 1.2KV 40A 2-Pin DO-5
|
New Jersey Semiconductor
|
| 70U120 |
Diode Switching 1.2KV 250A 2-Pin DO-9
|
New Jersey Semiconductor
|
| MDA920A7 MDA920A2 MDA920A4 MDA920A6 MDA920A8 MDA92 |
Diode Switching 1.2KV 1.129KA 3-Pin
|
New Jersey Semiconductor
|
| 2T2KF |
2KV Diode, Axial Leaded Fast Recovery Rectifier Diodes
|
Semtech Corporation
|
| IRKU91-12S90 IRKU71-12 IRKU71-12S90 IRKU71-16 IRKU |
THYRISTOR MODULE|SCR|DUAL|CC|1.2KV V(RRM)|90A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.2KV V(RRM)|70A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.6KV V(RRM)|70A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|400V V(RRM)|70A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|800V V(RRM)|70A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.6KV V(RRM)|90A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|800V V(RRM)|90A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|90A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 1.2KV五（无线资源管理）| 90A型我（翻译）
THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|70A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 1.2KV五（无线资源管理）|0A我（翻译
THYRISTOR MODULE|SCR|DUAL|CC|400V V(RRM)|90A I(T) 晶闸管模块|可控硅|双|消委会| 400V五（无线资源管理）| 90A型我（翻译）
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
Dynex Semiconductor, Ltd.
Glenair, Inc.
|
| MAX2670GTBT |
GPS/GNSS Front-End Amplifier ESD Protected to ±2kV Human Body Model
|
Maxim Integrated Products
|
| IRKT430-20 |
THYRISTOR MODULE|SCR DOUBLER|2KV V(RRM)|430A I(T) 晶闸管模块|可控硅倍增| 2kV的五（无线资源管理）| 430A我（翻译
|
International Rectifier, Corp.
|
| GP1600FSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 1.6KA I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展| 1.6KA一（c
|
Dynex Semiconductor, Ltd.
|
