| PART |
Description |
Maker |
| NE664M04-T2 NE664M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC Corp.
NEC[NEC]
|
| HSG2005 HSG2005TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| 2SC5945 2SC5945TR-E |
Si NPN Epitaxial High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| NE677M04-T2-A |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR 中功率NPN硅高频晶体管
|
California Eastern Laboratories, Inc.
|
| RM50DA-XXS RM50CA-XXS RM50C1A-XXS RM50 |
MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE 中功率，高频率使用的绝缘
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| KSB1116S KSB1116SYBU KSB1116SYTA KSB1116SYTANL |
PNP Epitaxial Silicon Transistor
Audio Frequency Power Amplifier Medium Speed Switching
From old datasheet system
Audio Frequency Power Amplifier Medium Speed Switching
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SA1723 |
High-Frequency Amp, Medium-Power Amp Applications
High-Frequency Amp/ Medium-Power Amp Applications
|
Sanyo Semicon Device
|
| QVS107CG160JCHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG100JDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
