| PART |
Description |
Maker |
| DS1870E-010 |
LDMOS RF Power-Amplifier Bias Controller
|
Maxim Integrated Products, Inc.
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MW5IC2030MBR1 MW5IC2030GMBR1 |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| MAX11008 MAX11008BETM |
Dual RF LDMOS Bias Controller with Nonvolatile Memory
|
Maxim Integrated Products
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| MW6IC2420NBR1 |
RF LDMOS Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MHVIC915NR2 |
RF LDMOS Wideband Integrated Power Amplifier
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MW7IC915NT1 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor
|
| NE55410GR07 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Labs
|
| MHPA19010 |
MHPA19010 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
|
Motorola
|
| MW7IC2750GNR1 MW7IC2750NBR1 MW7IC2750NR1 MW7IC2750 |
RF LDMOS Wideband Integrated Power Amplifier Capable of Handling 10:1 VSWR
|
Freescale Semiconductor, Inc
|
