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5962-86052013C - x8 SRAM

5962-86052013C_3015888.PDF Datasheet


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CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
AS7C256A AS7C256A-10JC AS7C256A-15JCN AS7C256A-15J IC,AS7C256A-10TCN,TSOP-28 ASY SRAM,10NS,32K X 8,5V
5V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 20 ns, PDSO28
SRAM - 5V Fast Asynchronous
ALLIANCE MEMORY INC
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI Low Power Slow SRAM - 256Kb
SWITCH, REED SPST-NO 10W SMD
QSW-REED,10MM,10W,SMD
9 POS FR-4 SIP SOCKET
x8|3V|70/85/100|Low Power Slow SRAM - 256K
x8|3.3V|70/85/100|Low Power Slow SRAM - 256K
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
x8 SRAM x8的SRAM
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Analog Devices, Inc.
Panasonic Industrial Solutions
R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (256-kword X 16-bit)
From old datasheet system
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 2-word Burst
Renesas Technology / Hitachi Semiconductor
HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
Renesas Technology / Hitachi Semiconductor
GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H 100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
GSI Technology, Inc.
AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT 2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
   2.5V 512K x 32/36 flowthrough burst synchronous SRAM
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
DS1220AB-200-IND DS1220Y DS1220Y-100 DS1220Y-120 D 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24
2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24
16K Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24
16K Nonovolatile SRAM
From old datasheet system
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconducotr]
DALLAS[Dallas Semiconductor]
http://
WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K 128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM(存取时7ns
128Kx8 3.3单片的SRAM28Kx83.3伏,单片静态随机存储器(存取时间为35ns))
128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
128K X 8 STANDARD SRAM, 20 ns, CDFP32
White Electronic Designs Corporation
White Electronic Designs, Corp.
MAR9264C70CD MAR9264C70FB MAR9264C70LB MAR9264C70N 8K X 8 STANDARD SRAM, 65 ns, CDIP28
8K X 8 STANDARD SRAM, 65 ns, CDFP28
8K X 8 STANDARD SRAM, 65 ns, CQCC
8K X 8 STANDARD SRAM, 65 ns, UUC

 
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