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UPD6P4BMC-5A4 - MS3112E22-32S

UPD6P4BMC-5A4_2980468.PDF Datasheet


 Full text search : MS3112E22-32S
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PART Description Maker
K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
MR18R326GAG0-CT9 MR18R326GAG0-CM8 MR18R326GAG0 (32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V 2Mx186个RIMM的模块基76Mb阿芯片,32秒银行,32K/32ms参考,.5V
(32Mx18) 16pcs RIMM Module based on 576Mb A-die 32s banks32K/32ms Ref 2.5V
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
A2W005G A2W10G A2W04G A2W06G A2W08G A2W02G A2W01G AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS 雪崩玻璃钝化桥式整流
KPT05E18-32S
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
MR18R162468MN1 (16Mx16)*4(6/8)pcs RIMMModule based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Serial Presence Detect
Samsung Electronic
6450130-5 MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL R/A HDR 9P 32S 4P ( AMP )
Tyco Electronics
1450120-1 MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL R/A HDR 8P 32S 8P ( AMP )
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1450120-5 MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL R/A HDR 7P 32S 6P ( AMP )
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