PART |
Description |
Maker |
K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MR18R326GAG0-CT9 MR18R326GAG0-CM8 MR18R326GAG0 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V 2Mx186个RIMM的模块基76Mb阿芯片,32秒银行,32K/32ms参考,.5V (32Mx18) 16pcs RIMM Module based on 576Mb A-die 32s banks32K/32ms Ref 2.5V
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
A2W005G A2W10G A2W04G A2W06G A2W08G A2W02G A2W01G |
AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS 雪崩玻璃钝化桥式整流 KPT05E18-32S
|
Electronics Industry Public Company Limited EIC[EIC discrete Semiconductors]
|
MR18R162468MN1 |
(16Mx16)*4(6/8)pcs RIMMModule based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Serial Presence Detect
|
Samsung Electronic
|
6450130-5 |
MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL R/A HDR 9P 32S 4P ( AMP )
|
Tyco Electronics
|
1450120-1 |
MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL R/A HDR 8P 32S 8P ( AMP )
|
Tyco Electronics
|
1450120-5 |
MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL R/A HDR 7P 32S 6P ( AMP )
|
Tyco Electronics
|
1450100-6 |
MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL VERT HDR 7P 32S 7P ( AMP )
|
Tyco Electronics
|
6450132-4 |
MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL R/A HDR 14P 32S SEL ( AMP )
|
Tyco Electronics
|