| PART |
Description |
Maker |
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable
Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| ICL7611 ICL7611BCPA ICL7611DCBA ICL7611DCBA-T ICL7 |
Op Amp, CMOS, Rail-to-Rail I/O, Programmable Icc, 1.4MHz, Low Voltage 1-8Vdc, Low Bias 0.05nA
Op Amp, CMOS, Rail-to-Rail Output, 1.4MHz, Low Voltage 1-8Vdc, Programmable Icc, Low Bias 0.05nA
1.4MHz, Low Power CMOS Operational Amplifiers
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| BXA3 BXA3-24S3V3 BXA3-12S15 BXA3-12S3V3 BXA3-24D05 |
Octal D-type flip flop non-inverting (3-state) with 5V tolerant inputs and outputs
Octal D-type latch non-inverting (3-state) with 5V tolerant inputs and outputs DC至DC转换
Low voltage CMOS octal bus transceiver (3-state) with 5V tolerant inputs and outputs
Low voltage CMOS quad bus buffer (3-state) with 5 V tolerant inputs and outputs
Low voltage CMOS octal bus buffer (3-state) with 5 V tolerant inputs and outputs
Low voltage CMOS octal bus buffer (3-state) with 5V tolerant inputs and outputs
Low voltage CMOS dual 2 to 4 decoder / demultiplexer
OCTAL BUS BUFFER (3-STATE NON INV.) WITH 5V TOLERANT INPUTS AND OUTPUTS
Low voltage CMOS 3 to 8 line decoder (inverter) with 5 V tolerant inputs
3W Wide Input DC/DC Converters
|
Electronic Theatre Controls, Inc.
ARTESYN[Artesyn Technologies]
|
| MC74LCX244 MC74LCX244DT MC74LCX244DW MC74LCX244M M |
From old datasheet system
LOW-VOLTAGE CMOS OCTAL TRANSCEIVER
Low-Voltage CMOS Octal Buffer With 5V-Tolerant Inputs and Outputs(3-State, Non-Inverting)
|
Motorola, Inc.
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| IS62C51216AL IS62C51216AL-55MLI IS62C51216AL-55TLI |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS65WV25616BLL-70TA2 IS65WV25616BLL-55TLA1 IS65WV2 |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc.
|
| IS65WV25616BLL IS65WV25616BLL-55TA1 IS65WV25616BLL |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
