PART |
Description |
Maker |
MC-4516CA726PF-A10 MC-4516CA726PF-A80 MC-4516CA726 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE MODULE UNBUFFERED TYPE
|
NEC, Corp. NEC Corp.
|
MC-4516CD642XS MC-4516CD642XS-A75 MC-4516CD642XS-A |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory
|
MC-4516CD641PS-A10 MC-4516CD641PS-A80 MC-4516CD641 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory
|
MC-428LFF721 |
3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作电压3.3V的动态RAM模块)
|
NEC Corp.
|
MC-4516CA727PF-A75 MC-4516CA727 MC-4516CA727EF-A75 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
MC-4516CB647EF-A75 MC-4516CB647PF-A75 MC-4516CB647 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
MC-4516CA726XF-A10 MC-4516CA726PF-A10 MC-4516CA726 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
TC514100AAZL-10 TC514100AAZL-70 TC514100AAZL-80 TC |
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:32-15 RoHS Compliant: No 4,194,304 WORD x BIT DYNAMIC RAM 4194304 WORD x BIT DYNAMIC RAM
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MC-4516CD641XS-A10 MC-4516CD641XS-A80 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 SOCKET TYPE, SODIMM-144 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory, Inc.
|
MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM) 2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
|
HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 |
16M x 4 Bit 8k DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. 16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|