| PART |
Description |
Maker |
| HYB18L256160BC-7.5 HYE18L256160BC-7.5 HYB18L256160 |
Very low Power SDRAM optimized for battery-powered, handheld applications
|
Infineon
|
| AMF-3D-001080-18-13P AMF-4F-00100100-15-10P AMF-4F |
100 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
5400 MHz - 5900 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
500 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
30000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
4400 MHz - 5100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
1500 MHz - 1800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
38000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
40000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
41000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
12000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
3000 MHz - 3500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
250 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
15000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
30 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
18000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
36000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7900 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2100 MHz - 2400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
200 MHz - 400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
50 MHz - 100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6400 MHz - 7200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
15500 MHz - 16500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
950 MHz - 1450 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
9500 MHz - 10500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
800 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
9000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
4000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
18000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| TC3403 TC3403VPE |
The TC3403 is a low cost, low power analog-to-digital converter based on Microchip’s Sigma-Delta technology. It will perform 16-bit conversions (15-bit plus sign) at up to eight per second. The TC3403 is optimized for use as a microc
1.8V Low Power, Quad Input, 16-Bit Sigma-Delta A/D Converter with a Power Fault Monitor and Microprocessor Reset Circuit
|
Microchip
Microchip Technology Inc.
|
| AUIRF7759L2 AUIRF7759L2TR1 |
A 75V Automotive Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance.
|
International Rectifier
|
| AUIRF7640S2 AUIRF7640S2TR AUIRF7640S2TR1 |
60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET S2 package rated at 21.0 amperes optimized with low on resistance.
|
International Rectifier
|
| AUIRF7732S2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SC package rated at 58 amperes optimized with low on resistance
|
International Rectifier
|
| AUIRF7736M2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 108 amperes optimized with low on resistance
|
International Rectifier
|
| VTS3180 VTS3182 VTS3185 VTS3080 VTS3082 VTS3085 |
Process photodiode. Isc = 3 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.
Process photodiode. Isc = 0.69 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.
Process photodiode. Isc = 0.16 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.
|
PerkinElmer Optoelectronics
|
| AFS3-00101200-35-ULN AFS3-00100600-20-ULN AFS3-020 |
100 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
2000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
2700 MHz - 3100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
|
| SFM-2A-1 |
MESFET HIGH IP3 MIXER SURFACE OPTIMIZED BANDWIDTH
OPTIMIZED BANDWIDTH SURFACE MOUNT MODEL
|
SYNERGY MICROWAVE CORPORATION
ETC[ETC]
List of Unclassifed Manufacturers
|
