| PART |
Description |
Maker |
| TIM5359-80SL |
IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level
|
Toshiba Semiconductor
|
| TIM5964-60SL08 |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
| TIM5964-16SL-422 |
IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz
|
Toshiba Semiconductor
|
| TIM1314-9L |
IM3(Min.)=−25dBc at Po=33dBm Single Carrier Level
|
Toshiba Semiconductor
|
| ICE2A165 ICE2A365 |
Integrated Power ICs - max. Pout=18W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=100kHz, Vbreak=650V, DIP8
|
Infineon
|
| HMC432E |
Ultra Low SSB Phase Noise: -148 dBc/Hz
|
Analog Devices
|
| BGA616 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 18dBm, SOT343
|
Infineon
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Semiconductor
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
| HMC586LC4B |
4 - 8 GHz, 5dBm Pout, -100dBc/Hz SSB Phase Noise@100kHz
WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4.0 - 8.0 GHz
|
Hittite Microwave Corporation
|
| P1000-1215 PDFP1000-1215 |
1 kWatt RF Pout
Input and Output Matched to 50 Ohms
|
Advanced Semiconductor
|
| BGA614 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 12dBm, SOT343
Silicon Germanium Broadband MMIC Amplifier
|
INFINEON[Infineon Technologies AG]
|
