PART |
Description |
Maker |
K4F160412D K4F160411D-BL50 |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
Samsung Semiconductor Co., Ltd.
|
MB814100C-60 MB814100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM) CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
MB814400C-60 MB814400C-70 |
CMOS 1 M ×4BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM) CMOS 1 M ×4 BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
AS4C4M4F1Q-50TC AS4C4M4F1Q-60TC AS4C4M4F1Q-60JC |
DRAM|FAST PAGE|4MX4|CMOS|SOJ|28PIN|PLASTIC DRAM|FAST PAGE|4MX4|CMOS|TSOP|28PIN|PLASTIC 4M X 4 FAST PAGE DRAM, 60 ns, PDSO28
|
ALLIANCE SEMICONDUCTOR CORP
|
MB8504D064AA-70 MB8504D064AA-60 |
CMOS 4M×64 BIT
Hyper Page Mode DRAM Module(CMOS 4M×64 位超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
MB814100A-80 MB814100A-60 MB814100A-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode 50ns 1M x 16bit CMOS dynamic ram with EDO page mode 60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器(的CMOS 256K × 16位快速页面存取模式动态内存) CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited Fujitsu, Ltd.
|
KM48C2100B KM48V2100B KM48C2000B KM48V2000B KM48C2 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
GLT41116-30J4 GLT41116-45J4 |
30ns; 64K x 16 CMOS dynamic RAM with fast page mode 45ns; 64K x 16 CMOS dynamic RAM with fast page mode
|
G-LINK Technology
|
MB8116165B-50 MB8116165B-60 |
1 M ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超级页面存取模式动态RAM) 1 M ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ?16浣??绾ч〉?㈠???ā寮????AM)
|
Fujitsu Limited
|