PART |
Description |
Maker |
GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns 4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
MH4V36AM-6 MH4V36AM-7 |
FAST PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 快速页面模50994944位(4194304 - Word6位)动态随机存储器
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
M5M5Y416CWG-85HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M5V408BFP M5M5V408BTP-85LW M5M5V408BKR-70HI |
512K X 8 STANDARD SRAM, 85 ns, PDSO32 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
M5M5V408BTP-70HI M5M5V408BTP-85H M5M5V408BTP-85HI |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
M5M54R04AJ-10 M5M54R04AJ-12 M5M54R04AJ-15 D99021 |
16B, FLASH, CANS,2XAT 4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MSM531655E-XXGS-K MSM531655E-XXTS-K MSM531655E |
524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM, 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM
|
OKI electronic componets
|
MSM531655E MSM531655E-XXTS-K MSM531655E-XXGS-K |
524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM, 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
MH4S64BBKG-7 MH4S64BBKG-8L MH4S64BBKG-10 MH4S64BBK |
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM 268435456位(4194304 -文字4位)SynchronousDRAM
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|