| PART |
Description |
Maker |
| BSZ180P03NS3G |
OptiMOSTM P3 Power-Transistor
|
Infineon Technologies AG
|
| BSZ099N06LS5 |
OptiMOSTM Power-Transistor,60V
|
Infineon Technologies A...
|
| IPB110N20N3LF |
OptiMOSTM 3 Linear FET, 200 V
|
Infineon Technologies A...
|
| BSZ018NE2LSI |
OptiMOSTM Power-MOSFET
|
Infineon Technologies A...
|
| BSZ028N04LS |
OptiMOSTM Power-MOSFET, 40 V
|
Infineon Technologies A...
|
| BSC050NE2LS |
OptiMOSTM Power-MOSFET
|
Infineon Technologies A...
|
| IPB80N04S2-04 IPI80N04S2-04 SP0002-18154 SP0002-19 |
80 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
OptiMOSPower-Transistor
|
INFINEON[Infineon Technologies AG]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| IPI100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 SP |
OptiMOST Power-Transistor
OPTIMOS⑶-T POWER-TRANSISTOR
OptiMOS㈢-T Power-Transistor
OptiMOS?-T Power-Transistor
|
Infineon Technologies AG
|
| SPU01N60C3 SPD01N60C3 Q67040-S4188 Q67040-S4193 |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
COOL MOS⒙ POWER TRANSISTOR
Cool MOS⑩ Power Transistor
Cool MOSPower Transistor
|
INFINEON[Infineon Technologies AG]
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
