| PART |
Description |
Maker |
| WMS128K8-17FEM WMS128K8-17FM WMS128K8-55CLC WMS128 |
55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
17ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
15ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
x8 SRAM x8的SRAM
25ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
|
White Electronic Designs
Microchip Technology, Inc.
Sharp, Corp.
Electronic Theatre Controls, Inc.
Raltron Electronics, Corp.
|
| IC62LV2568L-55HI |
55ns; 2.7-3.6V; 256K x 8 low power and Vcc CMOS static RAM
|
ICSI
|
| AD621 AD621ARZ-R7 AD621AR-REEL AD621AR-REEL7 AD621 |
-18V; 650mW; low drift, low power instrumentation amplifier. For weigh scales, transduver interface and data acquisition systems
Low Drift, Low Power Instrumentation Amp with fixed gains of 10 and 100 INSTRUMENTATION AMPLIFIER, 185 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO8
Low Cost,Low Power Instrumention Amplifier
|
Analog Devices, Inc.
|
| K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| V62C5181024L-45WI V62C5181024L-55WI V62C5181024LL- |
128K x 8 CMOS static RAM, 45ns, low power
128K x 8 CMOS static RAM, 55ns, low power
128K x 8 CMOS static RAM, 45ns, low low power
|
Mosel Vitelic Corp
|
| K6T4016V3CK6T4016U3CFAMILY |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| SPIRIT1QTR |
Low data rate, low power sub-1GHZ transceiver
|
List of Unclassifed Manufacturers
|
| K6F4016U4EFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4016R6CFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4008U2CFAMILY |
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| MAX3873AEGP |
16-Channel LVDM Transceiver 64-TSSOP -40 to 85
Low-Power, Compact 2.5Gbps/2.7Gbps Clock-Recovery and Data-Retiming IC
Low-Power / Compact 2.5Gbps/2.7Gbps Clock-Recovery and Data-Retiming IC
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
|
| K6F4008R2CFAMILY K6F4008R2C-FF850 |
512K X 8 STANDARD SRAM, 85 ns, PBGA48
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
