| PART |
Description |
Maker |
| RQJ0303PGDQA RQJ0303PGDQATL-E |
3300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| CM1500HC-66R |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
1500 A, 3300 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| DIM200PHM33-F000 |
Half Bridge IGBT Module 200 A, 3300 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD
Dynex Semiconductor, Ltd.
|
| SAPANEL30 |
12dBi 3300-3800MHz CPE Antenna
|
List of Unclassifed Manufac...
|
| PEH169RK433VMU2 |
Capacitor, aluminum, 3300 uF, /-20% Tol, -40/ 85C, 200VDC@85° C
|
Kemet Corporation
|
| DS1608BL-335C |
1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR, SMD
|
COILCRAFT INC
|
| 16REV3300M18X16.5 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 3300 uF, SURFACE MOUNT
|
3M Company
|
| QRJ3310002 QRL3310002 QRE3310002 QRK3310002 |
Fast Recovery Diode Module 100 Amperes/3300 Volts
|
Powerex Power Semiconductors
Powerex Power Semiconductor...
Powerex Power Semicondu...
|
| PM1200HCE330- PM1200HCE330-1 PM1200HCE330 |
-High Voltage Intelligent Power Module (1200 Amperes/3300 Volts)
|
Powerex Power Semiconductors
|
| ERJ8GEK332V |
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 10 %, 200 ppm, 3300 ohm, SURFACE MOUNT CHIP
|
Panasonic, Corp.
|
| EST338M016AL6AA |
Aluminum Electrolytic, 105C LowZ, EST, 3300 uF, 20%, 16 V, -40/ 105C, Lead Spacing = 5mm
|
Kemet Corporation
|
| YSF-382 |
3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MINI-CIRCUITS
|
