| PART |
Description |
Maker |
| WEDF1M32B-905 WEDF1M32B-705 WEDF1M32B-XHX5 WEDF1M3 |
1Mx32 5V Flash Module(5VMx32闪速存储器模块(存取时间90ns
1Mx32 5V Flash Module(5VMx32闪速存储器模块(存取时间70ns
1Mx32 5V Flash Module(5VMx32闪速存储器模块(存取时间120ns
Flash MCP 闪存MCP
|
White Electronic Designs Corporation
|
| EDI9LC644V EDI9LC644AV2010BC EDI9LC644AV1512BC EDI |
128Kx32 SSRAM/1Mx32 SDRAM Array(3.3V,128x32同步静态RAMB>1Mx32同步动态RAM阵列)
128Kx32 SSRAM/1Mx32 SDRAM Array(3.3V,128x32同步静态RAMMx32同步动态RAM阵列)
SPECIALTY MEMORY CIRCUIT, PBGA153
|
White Electronic Designs Corporation
|
| EDI7F331MV EDI7F331MV150BNC EDI7F331MV90BNC EDI7F3 |
1MX32 FLASH MODULE
|
WEDC[White Electronic Designs Corporation]
|
| WEDF1M32B-090HM5A WEDF1M32B-HI5A WEDF1M32B-HM5 WED |
1Mx32 5V Flash Module
|
http://
|
| EDI7F2331MV120BNC EDI7F2331MV150BNC |
1Mx32 FLASH MODULE
|
White Electronic Design...
|
| EDI9LC644V EDI9LC644V1310BC EDI9LC644V1312BC EDI9L |
128Kx32 SSRAM/1Mx32 SDRAM
|
White Electronic Designs Corporation
|
| HMD1M32M2EG HMD1M32M2EG-60 HMD1M32M2EG-45 |
4Mbyte(1Mx32) EDO Mode, 1K Refresh, 72Pin SIMM, 5V Design 4MbyteMx32）EDO公司模式，每1000刷新2Pin上海药物研究所V的设
|
Hanbit Electronics Co.,Ltd.
Panasonic Industrial Solutions
Hanbit Electronics Co., Ltd.
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| W7G1M32SVX-BN W7G21M32SVB90BNI W7G21M32SVX-BN |
8MB/4MB (2x1Mx32 / 1Mx32) CMOS, Boot Sector Flash Memory Module
8MB/4MB (2x1Mx32 / 1Mx32) CMOS, Boot Sector Flash Memory Module
|
White Electronic Designs Co...
White Electronic Design...
|
| AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
ETC[ETC]
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Alliance Semiconductor ...
|
| P4C1024-17PC P4C214-17PPC P4C1024-17JC P4C1024-17J |
128K X 8 STANDARD SRAM, 17 ns, PDIP32 PLASTIC, DIP-32
16K X 16 CACHE SRAM, 17 ns, PQCC52 PLASTIC, LCC-52
128K X 8 STANDARD SRAM, 17 ns, PDSO32 SOJ-32
64K X 1 STANDARD SRAM, 10 ns, PDIP22
1K X 4 STANDARD SRAM, 10 ns, PDIP18
128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
Performance Semiconductor, Corp.
Pyramid Semiconductor, Corp.
PERFORMANCE SEMICONDUCTOR CORP
PYRAMID SEMICONDUCTOR CORP
|
| R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416 |
4M High Speed SRAM (256-kword x 16-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
SRAM
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
