| PART |
Description |
Maker |
| 310-025107-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025107-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025105-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-024103-022 024103-022 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| FH103 1283 |
High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| CCF-2 |
Industrial Power, Flameproof (High Temperature Coating Meets EIA RS-325-A Spec), Small Size, High Power Rating, Excellent High Frequency Characteristics, Low Noise, Low Voltage Coefficient, Tape and Reel Packaging
|
Vishay
|
| 2SC3356L-X-AE3-R 2SC3356-X-AE3-R 2SC3356G-X-AE3-R |
HIGH FREQUENCY LOW NOISE AMPLIFIER
|
Unisonic Technologies
|
| HSG1003 HSG1003VE |
High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation
|
| 2SC5474 |
Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
|
Panasonic
|
