PART |
Description |
Maker |
EDI2CG472128V10D2 EDI2CG472128V85D2 EDI2CG472128V- |
4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 4x128Kx723.3同步/同步突发静态存储器x128Kx723.3伏,10纳秒,同同步脉冲静态内存模块) 4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块) 4x128Kx72.3同步/同步突发静态存储器x128Kx72.3伏,8.5ns,同同步脉冲静态内存模块) 4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?) SSRAM Modules
|
Bourns, Inc. Electronic Theatre Controls, Inc.
|
EDI2AG272129V10D1 EDI2AG272129V12D1 EDI2AG272129V9 |
2 Megabyte Sync/Sync Burst, Small Outline DIMM
|
WEDC[White Electronic Designs Corporation]
|
FN7173 EL4583CSZ-T7 EL4583 EL4583CN EL4583CS EL458 |
Sync Separator, 50% Slice, S-H, Filter, Horizontal sync output
|
INTERSIL[Intersil Corporation]
|
WT9051 |
Sync Singal Processor for Multi-Sync Display
|
Weltrend Semiconductor
|
ISL59885 ISL59885IS-T13 ISL59885IS-T13R5218 ISL598 |
Auto-Adjusting Sync Separator for HD and SD Video SYNC SEPARATOR IC, PDSO8
|
Intersil, Corp. Exar, Corp. Intersil Corporation
|
GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM 12ns 256K x 18 4Mb sync burst SRAM 8.5ns 256K x 18 4Mb sync burst SRAM 8ns 256K x 18 4Mb sync burst SRAM 10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 |
133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MBS /双氰胺同步突发静态存储器 DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35 (GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers List of Unclassifed Man...
|
CY7C4261 CY7C4271 7C4261 |
16Kx9 Deep Sync FIFOs(16Kx9 位深同步先进先出(FIFO From old datasheet system 16K/32Kx9 Deep Sync FIFOs
|
Cypress Semiconductor Corp.
|
CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100 CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|