
	Part Number	Hot Search : OP295 SPL2192 150D1 M3004 TGF2040 25ETTS FT2232 2SB12
	Product Description
	Full Text Search

M29W641DH12ZA1E - 4M X 16 FLASH 3V PROM, 70 ns, PDSO48 Low-Power Single Bus Buffer Gate with 3-State Output 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一3V电源快闪记忆 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一3V电源快闪记忆 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一V电源快闪记忆 Low-Power Single 2-Input Positive-AND Gate 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆 Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆 Shielded Multiconductor Cable; Number of Conductors:25; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Shielded Multiconductor Cable; Number of Conductors:15; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Low-Power Single 2-Input Positive-AND Gate 5-SOT-23 -40 to 85 Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes 64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory Low-Power Single Buffer/Driver with Open-Drain Outputs 5-DSBGA -40 to 85

M29W641DH12ZA1E_2772577.PDF Datasheet


Part No.	M29W641DH12ZA1E M29W641DH12ZA1F M29W641DH12ZA6E M29W641DH12ZA6F M29W641DH12ZA6T M29W641DL12ZA1E M29W641DL12ZA1F M29W641DL12ZA6E M29W641DL12ZA6F M29W641DL12ZA6T M29W641DU12ZA1E M29W641DU70N1E M29W641DU70N1F M29W641DU70N6E M29W641DU70N6F M29W641DU70ZA1E M29W641DU70ZA1F M29W641DU70ZA6E M29W641DU70ZA6F M29W641DU70ZA6T M29W641DH10N1E M29W641DH10N1F M29W641DH10N6E M29W641DH10N6F M29W641DH10N6T M29W641DH10ZA1E M29W641DH10ZA6T M29W641DH12N1E M29W641DH12N1F M29W641DH12N6F M29W641DH12N6T
Description	4M X 16 FLASH 3V PROM, 70 ns, PDSO48 Low-Power Single Bus Buffer Gate with 3-State Output 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一3V电源快闪记忆 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一3V电源快闪记忆 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一V电源快闪记忆 Low-Power Single 2-Input Positive-AND Gate 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆 Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆 Shielded Multiconductor Cable; Number of Conductors:25; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Shielded Multiconductor Cable; Number of Conductors:15; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Low-Power Single 2-Input Positive-AND Gate 5-SOT-23 -40 to 85 Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes 64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory Low-Power Single Buffer/Driver with Open-Drain Outputs 5-DSBGA -40 to 85
File Size	344.13K / 42 Page
Maker	NUMONYX STMicroelectronics N.V. 意法半导 ST Microelectronics
Homepage
Download	[ M29W641DH12ZA1E M29W641DH12ZA1F M29W641DH12ZA6E M29W641DH12ZA6F M29W641DH12ZA6T M29W641DL12ZA1E M29W Datasheet PDF Downlaod from IC-ON-LINE.CN ] [ M29W641DH12ZA1E M29W641DH12ZA1F M29W641DH12ZA6E M29W641DH12ZA6F M29W641DH12ZA6T M29W641DL12ZA1E M29W Datasheet PDF Downlaod from Datasheet.HK ] [M29W641DH12ZA1E M29W641DH12ZA1F M29W641DH12ZA6E M29W641DH12ZA6F M29W641DH12ZA6T M29W641DL12ZA1E M29W Datasheet PDF Downlaod from Maxim4U.com ] :-) [ View it Online ] [ Search more for M29W641DH12ZA1E ] [ Price & Availability of M29W641DH12ZA1E by FindChips.com ]

Full text search : 4M X 16 FLASH 3V PROM, 70 ns, PDSO48 Low-Power Single Bus Buffer Gate with 3-State Output 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一3V电源快闪记忆 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一3V电源快闪记忆 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一V电源快闪记忆 Low-Power Single 2-Input Positive-AND Gate 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆 Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆 Shielded Multiconductor Cable; Number of Conductors:25; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Shielded Multiconductor Cable; Number of Conductors:15; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Low-Power Single 2-Input Positive-AND Gate 5-SOT-23 -40 to 85 Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes 64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory Low-Power Single Buffer/Driver with Open-Drain Outputs 5-DSBGA -40 to 85

Related Part Number

PART	Description	Maker
AM29LV160BT-90WCC AM29LV160BT-90EE AM29LV160BT-90S	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 1M X 16 FLASH 3V PROM, 90 ns, PDSO44 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 1M X 16 FLASH 3V PROM, 120 ns, PDSO48	Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
SST39VF010-90-4C-B3KE SST39VF040-90-4C-WHE SST39VF	128K X 8 FLASH 2.7V PROM, 90 ns, PBGA48 512K X 8 FLASH 2.7V PROM, 90 ns, PDSO32 512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32 64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32 256K X 8 FLASH 2.7V PROM, 90 ns, PDSO32	SILICON STORAGE TECHNOLOGY INC
S29GL512N S29GL256N90FFI010 S29GL256N90FFIV20 S29G	MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 100 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 32M X 16 FLASH 3V PROM, 100 ns, PBGA64 JT 13C 13#22M PIN PLUG 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 80 ns, PDSO56 MirrorBit Flash Family MirrorBit闪存系列 Replaced by PTB48520W : 16M X 16 FLASH 3V PROM, 100 ns, PBGA64 JT 13C 13#22D SKT PLUG	Spansion, Inc. Spansion Inc. ETC
CAT28F001N-15TT CAT28F001P-70B CAT28F001N-15BT CAT	128K X 8 FLASH 12V PROM, 150 ns, PDIP32 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32 x8 Flash EEPROM x8闪存EEPROM 1 Megabit CMOS Boot Block Flash Memory	Ironwood Electronics Atmel, Corp. Rectron Semiconductor http://
GLS37VF040-70-3C-NHE SST37VF020-70-3C-PHE SST37VF0	-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 128K X 8 FLASH 2.7V PROM, 70 ns, PDIP32	SILICON STORAGE TECHNOLOGY INC
AS8FLC1M32BQT-90_IT AS8FLC1M32BQT-90_Q AS8FLC1M32B	Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array 1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HIP-66 1M X 32 FLASH 3V PROM, 100 ns, CQFP68	http:// Austin Semiconductor, Inc MICROSS COMPONENTS
SST25VF040-20-4C-S2AE SST25VF020-20-4C-SAE SST25VF	4M X 1 FLASH 2.7V PROM, PDSO8 4 Mbit Uniform Sector, Serial Flash Memory 4M X 1 FLASH 2.7V PROM, DSO8	Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
HY27US08561A HY27US16561A HY27SS08561A HY27SS16561	256Mbit (32Mx8bit / 16Mx16bit) NAND Flash 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63 16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63	Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
AM29SL160CB-90WCC AM29SL160CB-100WCI AM29SL160CB-1	1M X 16 FLASH 1.8V PROM, 90 ns, PBGA48 1M X 16 FLASH 1.8V PROM, 100 ns, PBGA48 1M X 16 FLASH 1.8V PROM, 150 ns, PDSO48	ADVANCED MICRO DEVICES INC
SST28SF040A-120-4I-EHE SST28SF040A-120-4C-EHE SST2	4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 512K X 8 FLASH 5V PROM, 120 ns, PQCC32 512K X 8 FLASH 5V PROM, 120 ns, PDSO32	Silicon Storage Technol... SILICON STORAGE TECHNOLOGY INC
TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3	(TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 3V PROM, 110 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48 RES 10K-OHM 2% 0.25W 100PPM MET-FILM AXIAL TR-13 R-MIL-PRF-39017 智能高级启动34 - - 6 - 2 - Mbit闪存家庭 TVS UNI-DIR 70V 400W SMA 智能高级启动3 - - 6 - 2 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 2 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 32 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY	TE Connectivity, Ltd. Intel, Corp. Intel Corp. Intel Corporation

Related keyword From Full Text Search System

M29W641DH12ZA1E eeprom pdf	M29W641DH12ZA1E eeprom	M29W641DH12ZA1E Cycle	M29W641DH12ZA1E enhancement	M29W641DH12ZA1E FRE DOUNLODE
M29W641DH12ZA1E maxim	M29W641DH12ZA1E read	M29W641DH12ZA1E bridge	M29W641DH12ZA1E maker	M29W641DH12ZA1E frequency

Price & Availability of M29W641DH12ZA1E

All Rights Reserved © IC-ON-LINE 2003 - 2022

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]

Mirror Sites : [www.datasheet.hk] [www.maxim4u.com] [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com] [www.gdcy.net]

. . . . .

We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy.

X

4.8571190834045