| PART |
Description |
Maker |
| KM48S8030 KM48S8030C KM48S8030CT-G_FA KM48S8030CT- |
2M x 8Bit x 4 Banks Synchronous DRAM 200万8位4银行同步DRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S560832D-NCL7C |
8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz
|
Samsung Electronic
|
| K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| KM48S16030A KM48S16030AT-G_F10 KM48S16030AT-G_FA K |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
|
Electronic Theatre Controls, Inc.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48S16030B KM48S16030BT-G_F10 KM48S16030BT-G_F8 K |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM4米8位4银行同步DRAM LVTTL
16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Electronic Theatre Controls, Inc.
|
| MT47H32M16HR-25E MT47H64M8CF-25EG |
DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| TC554001FI TC554001FI-10 TC554001FI-85 TC554001FTI |
524288 WORDS x 8BIT STATIC RAM
524,288 WORDS x 8BIT STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
