PART |
Description |
Maker |
BLF640-15 |
Broadband power LDMOS transistor
|
NXP Semiconductors
|
BLF644P-15 |
Broadband power LDMOS transistor
|
NXP Semiconductors
|
BLF640 |
Broadband power LDMOS transistor
|
NXP Semiconductors
|
BLF573S BLF573 |
HF / VHF power LDMOS transistor A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
0805 1008 T491X226K035AS 100B100JCA500X 100B120JP5 |
RF LDMOS Wideband Integrated Power Amplifiers MW4IC001MR4 W-CDMA 0.8-2.17 GHz, 900 mW, 28 V RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, In... FREESCALE[Freescale Semiconductor, Inc] Motorola
|
0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦,28V的,1 GHz的LDMOS的场效应 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
BLL6H0514-25 |
LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,; LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
LET19060C |
RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技 RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|