PART |
Description |
Maker |
PTFA041501GL PTFA041501HL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Infineon Technologies AG
|
PTFA092213EL-15 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
GTVA221701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
PTFB090901FAV2R0 PTFB090901FAV2R250XTMA1 PTFB09090 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
PXAC182908FV PXAC182908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFB181702FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFA260451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
PTAC210802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
PTFB090901FA PTFB090901EA |
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz
|
Infineon Technologies AG
|
PTFB211501E PTFB211501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
PTFB091802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ?960 MHz
|
Infineon Technologies A...
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