PART |
Description |
Maker |
M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
M29W128GH70N3E M29W128GL |
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory 128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
|
Numonyx B.V
|
M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7060B1ZAQF M36 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
M30W0R7000B1 |
128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
M36LLR8760B1 M36LLR8760M1 M36LLR8760TT M36LLR8760D |
256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
意法半导 STMicroelectronics ST Microelectronics
|
M36L0R7050L1ZAMF M36L0R7050L1ZAME M36L0R7060U1ZAMF |
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位(复用的I / O,多银行,多层次,多突发)快闪记忆体264兆移动存储芯片,1.8V电源多芯片封 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位(复用的I / O,多银行,多层次,多突发)快闪记忆体24兆移动存储芯片,1.8V电源多芯片封
|
意法半导 STMicroelectronics N.V.
|
M58LW128BZA M58LW128A M58LW128A150N1E M58LW128A150 |
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
M29DW128F M29DW128F70NF1 M29DW128F70NF1E M29DW128F |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
|
Numonyx B.V
|