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K1B3216BDD - 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM

K1B3216BDD_2746496.PDF Datasheet


 Full text search : 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM


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PART Description Maker
K7A203600 K7A203600A K7A203600B-QCI14 64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999)
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
GS820E32A GS820E32AQ-4 GS820E32AQ-6I GS820E32AT-6I 66MHz 18ns 64K x 32 2M synchronous burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
64K x 32 / 2M Synchronous Burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
GSI Technology
GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
GSI Technology, Inc.
KM732V787 128Kx32-Bit Synchronous Burst SRAM
Samsung Semiconductor
AS7C3256PFD18A-4TQC AS7C3256PFD16A-4TQC AS7C3256PF 3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz
256K X 18 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
256K X 16 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 100 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 166MHz
Alliance Semiconductor, Corp.
GS820322T-138 GS82032T-66 GS82032Q-150 GS82032Q-5I 66MHz 18ns 64K x 32 2M synchronous burst SRAM
PROGRAMMER UNIVERSAL 40-PIN
64K x 32 / 2M Synchronous Burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K的32 200万同步突发静态存储器
PROGRAMMER UNIV W/USB 48-PIN 64K的32 200万同步突发静态存储器
.56UF/100VDC METAL POLY CAP 64K的32 200万同步突发静态存储器
64K X 32 CACHE SRAM, 11 ns, PQFP100
GSI Technology
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
K7A203200A K7A203200A-10 K7A203200A-14 K7A203200A- 64Kx32-Bit Synchronous Pipelined Burst SRAM
Samsung semiconductor
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Samsung Semiconductor
KM732V787 128Kx32-Bit Synchronous Burst SRAM(128Kx32位同步脉静RAM)
SAMSUNG SEMICONDUCTOR CO. LTD.
K7A403601M 128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet
Samsung Electronic
KM736V687 64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
 
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