PART |
Description |
Maker |
FS1209DH FS1209BH FS1209MH FS1210BH |
Standard Gate SCRs 600 V, standard SCR 200 V, standard SCR 400 V, standard SCR
|
Fagor
|
MCR100-6 |
Standard Gate SCR
|
DnI
|
DCP10C60 |
Standard Gate SCR
|
DnI
|
MCR101G-X-XX-T92-K MCR101G-X-XX-T92-B MCR101-6-B-T |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 0.8 A, 400 V, SCR, TO-92 0.8 A, 600 V, SCR, TO-92 0.8 A, 200 V, SCR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
A29001 A290011T-55 A290011T-70 A290011TL-70 A29001 |
128K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory 5015 RR 4#12 SKT RECPT 5015 RR 4#12 PIN RECPT SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes 128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K的8位CMOS 5.0伏只,引导扇区闪
|
AMIC Technology Corporation AMIC Technology, Corp.
|
CR02AM-4 CR02AM CR02AM-6 CR02AM-8 |
0.47 A, 200 V, SCR, TO-92 0.47 A, 300 V, SCR, TO-92 LOW POWER USE PLANAR PASSIVATION TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
R216CH12FKO R216CH12CJO R216CH12CHO R325CH02CJO R3 |
879.2 A, 1200 V, SCR, TO-200AB 1852.6 A, 200 V, SCR 1891.85 A, 1800 V, SCR 1271.7 A, 200 V, SCR, TO-200AC 1271.7 A, 400 V, SCR, TO-200AC 1271.7 A, 600 V, SCR, TO-200AC 1271.7 A, 1000 V, SCR, TO-200AC 1271.7 A, 800 V, SCR, TO-200AC 1998.61 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd. WESTCODE SEMICONDUCTORS LTD
|
BDW21A |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA Bipolar NPN Device in a Hermetically sealed TO3
|
Glenair, Inc. Seme LAB
|
MCR22-6-D MCR22-2RL1 |
Seinsitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Sensitive Gate SCR
|
ON Semiconductor
|
5SGA30J4502 |
Asymmetric Gate turn-off Thyristor 1460 A, 4500 V, GATE TURN-OFF SCR
|
ABB, Ltd. ABB[The ABB Group]
|
MP03XXX190-12 MP03XXX190 MP03XXX190-08 MP03XXX190- |
Phase Control Dual SCR, SCR/Diode Modules 相位控制双可控硅,SCR /二极管模
|
Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
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