PART |
Description |
Maker |
PN10-8FF-L PN10-10FF-D |
12-10 BARREL NYLON INSUL FLANGED FORK 225 5.72 MAX WIRE INSUL DIA COPPER ALLOY, TIN FINISH, FORK TERMINAL
|
PANDUIT CORP.
|
MP6901 |
4 A, 80 V, 6 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching High Power Switching Applications / Hammer Drive
|
TOSHIBA[Toshiba Semiconductor]
|
FS30KMH-2 |
Power MOSFETs: FS Series, Low Voltage, 100V for High-Speed Switching Use Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation Powerex Power Semiconductors
|
2SJ553 2SJ553L 2SJ553S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ528 2SJ528L 2SJ528S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http:// TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
MP4501 |
N CHANNEL MSO TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
MP441007 MP4410 |
High Power, High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
|
Toshiba Semiconductor
|
387216702 |
9.53 [.375] SR BTS ASY, INSUL. FT, W/MTG
|
Molex Electronics Ltd.
|
Z7.283.2227.0 Z7.255.1027.0 Z7.211.0027.0 Z7.211.0 |
INSUL. JUMPER BAR IVBWKN10 - 2 INTERCONNECTION DEVICE
|
Wieland Electric, Inc. WIELAND ELECTRIC INC
|