| PART |
Description |
Maker |
| IXTK33N50 |
Discrete MOSFETs: Standard N-channel Types
High Current MegaMOSFET
|
IXYS[IXYS Corporation]
|
| IXTH40N30NBSP IXTH40N30 IXTM40N30 |
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET)
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.085Ω的N沟道增强B>MegaMOSFET)
From old datasheet system
N-Channel Enhancement MOSFET
|
IXYS Corporation
|
| IXTM24N50 IXTH21N50 IXTM21N50 IXTH24N50 |
MegaMOSFET
|
IXYS[IXYS Corporation]
|
| IXTM11N80 |
MegaMOSFET
|
IXYS Corporation
|
| 4590R-223K 4590R-563K 4590R-823K 4590-682K 4590-68 |
INDUCTOR HIGH CURRENT 22.0UH 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 56.0UH 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 82.0UH 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 6.8UH 1 ELEMENT, 6.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
High Current Filter Inductors
INDUCTOR HIGH CURRENT 5.6UH 1 ELEMENT, 5.6 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 1500UH 1 ELEMENT, 1500 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 470.0UH 1 ELEMENT, 470 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 180.0UH 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 18000UH 1 ELEMENT, 18000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 680.0UH 1 ELEMENT, 680 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR AXIAL LEADED
INDUCTOR HIGH CURRENT 27000UH
1 ELEMENT, 15000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
|
API Delevan
|
| A0837 BC876 |
PNP Silicon Darlington Transistors (High current gain High collector current)
From old datasheet system
|
Siemens
Infineon
|
| SR104-T SR104-B |
HIGH CURRENT SCHOTTKY BARRIER RECTIFIER
High Current Capability and Low Forward Drop
|
Diodes Incorporated
|
| CMSSH-3E CMSSH-3SE CMSSH-3AE CMSSH-3CE |
SMD Schottky Diode Dual: High Current: Common Anode
SMD Schottky Diode Dual: High Current: Common Cathode
SMD Schottky Diode Dual: High Current: In Series
SMD Schottky Diode Single: High Current
ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| BC637 |
NPN Silicon AF Transistors (High current gain High collector current)
|
Siemens Semiconductor G...
|
| 2SC5069 |
High current capacity. Adoption of MBIT process. High DC current gain.
|
TY Semiconductor Co., Ltd
|
| BC369 C62702-C748 |
From old datasheet system
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BC635 Q68000-A3361 BC637 BC639 Q68000-A2285 Q68000 |
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Silicon AF Transistors (High current gain High collector current) NPN硅晶体管自动对焦（高电流增益高集电极电流
From old datasheet system
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
