| PART |
Description |
Maker |
| AWT921S11 |
Integrated High Power Amp 900 MHz
|
ANADIGICS[ANADIGICS, Inc]
|
| ZL2005ALNFT1 ZL2005ALNFT ZL2005 |
Digital-DCIntegrated Power Management and Conversion IC
Digital-DC™ Integrated Power Management and Conversion IC; Temperature Range: -40°C to 85°C; Package: 36-QFN T&R SWITCHING CONTROLLER, 2000 kHz SWITCHING FREQ-MAX, QCC36
Digital-DC?Integrated Power Management and Conversion IC
|
Intersil, Corp.
Intersil Corporation
|
| 0805 1008 T491X226K035AS 100B100JCA500X 100B120JP5 |
RF LDMOS Wideband Integrated Power Amplifiers
MW4IC001MR4 W-CDMA 0.8-2.17 GHz, 900 mW, 28 V RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, In...
FREESCALE[Freescale Semiconductor, Inc]
Motorola
|
| MRFIC0914 |
900 MHz PAGING POWER AMPLIFIER Si MONOLITHIC INTEGRATED CIRCUIT
|
MOTOROLA[Motorola, Inc]
|
| MW4IC001NR4 |
800鈥?170 MHz, 900 mW, 28 V W鈥揅DMA RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA
|
| AWT1921 AWT1921S11 |
The AWT 1921 is a four stage monolithic amplifier for use in communication systems that require high gain and output intercept point.
Integrated High Power Amp 1610 MHz
From old datasheet system
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| 3032 3032SERIES 3032-6017-00 3032-6019-00 |
CRYSTAL, 3.686400MHZ 20PF HC-49
90?Crossover Hybrid Coupler 800-900锛?890-960. or 1700-1900 MHz
90Crossover Hybrid Coupler 800-900890-960. or 1700-1900 MHz 90？交叉混合耦合800-90090-960。兆赫或1700年至00
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 90？交叉混合耦合800-90090-960。兆赫或1700年至00
90 CROSSOVER HYBRID COUPLER 800-900/890-960/ OR 1700-1900 MHZ
90 CROSSOVER HYBRID COUPLER 800-900,890-960, OR 1700-1900 MHZ
|
PHOENIX CONTACT Deutschland GmbH
Tyco Electronics
|
| EDI8C32512CA20EQ EDI8C32512CA20EI EDI8C32512CA20EM |
270MHz Ultra-Accurate Amplifiers; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 14-HTSSOP T&R
500MHz Low Power Current Feedback Amplifier; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
18-Channel TFT-LCD Reference Voltage Generator; Temperature Range: -40°C to 85°C; Package: 38-HTSSOP T&R
Multi-Channel Buffer; Temperature Range: -40°C to 85°C; Package: 16-TSSOP T&R
Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 28-HTSSOP T&R X32号的SRAM模块
|
Microchip Technology, Inc.
|
| APT36N90BC3G |
Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
| EDI8F3265C20MZC EDI8F3265C20MMC |
High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R X32号的SRAM模块
|
TE Connectivity, Ltd.
|
| MRFIC2004 |
900 MHz DRIVER & RAMP SILICON MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| SXL-208-BLK SXL-208-TR1 SXL-208-TR2 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 100/TRAY.
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 500. Reel size 7
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 1000. Reel size 13
|
Stanford Microdevices
|
