| PART |
Description |
Maker |
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDC016F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| MINISMDC110 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| S1R72U16 |
Allows USB devices to be controlled as IDE devices
|
Epson Company
|
| TRF600-150-B-0.5 TRF600-150-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| GAL22V10D-25LJNI LATTICESEMICONDUCTORCORP-GAL22V10 |
EE PLD, 25 ns, PQCC28 LEAD FREE, PLASTIC, LCC-28
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.
All Devices Discontinued
GAL 22V10 Device Datasheet
|
Lattice Semiconductor, Corp.
|
| EPC2LI20 EPC1441PI8 EPC2 EPC8 |
Configuration Devices For SRAM-based Lut Devices, 440,800 1-bit Device With 5.0-V or 3.3-V Operation
Configuration Device Family
|
Altera Corporation
|
| 93LC76 93LC86 |
This datasheet is compatible with the following devices: 93AA76, 93C76, and 93LC76.
This datasheet is compatible with the following devices: 93AA86, 93C86, and 93LC86.
|
Microchip
|
| NANOSMDC035F |
PolySwitch? PTC Devices
PolySwitch垄莽 PTC Devices
|
Tyco Electronics
|
|
